Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
R
θJA 51 60
R
θJC
1.4 2.5
±20
Pulsed Drain Current
Gate-Source Voltage
Drain-Source Voltage
I
D
38
27
Continuous Drain
Current
B
T
C
=25°C
G
T
C
=100°C
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
A
30
140
60
60
Parameter Maximum Units
60
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25°C
P
D
W
T
C
=100°C 30
Avalanche Current
C
Junction and Storage Temperature Range -55 to 175
Thermal Characteristics
Parameter Units
°C
Maximum Junction-to-Case
B
Steady-State °C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
AOU400
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 38A (V
GS
= 10V)
R
DS(ON)
< 20mΩ (V
GS
= 10V)
R
DS(ON)
< 25mΩ (V
GS
= 4.5V)
General Description
The AOU400 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOU400 is Pb-free
(meets ROHS & Sony 259 specifications). AOU400L
is a Green Product ordering option. AOU400 and
AOU400L are electrically identical.
G
D
S
G D S
TO-251
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.