Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
40 50
R
θJC
1.3 2
Repetitive avalanche energy L=0.1mH
C
45
A
mJ
Junction and Storage Temperature Range
A
P
D
°C
75
37.5
-55 to 175
T
C
=100°C
Avalanche Current
C
30
I
D
85
62.5
200Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage 30
W
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
Steady-State
°C/W
AOT426
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A
R
DS(ON)
< 6mΩ (V
GS
= 10V)
R
DS(ON)
< 11mΩ (V
GS
= 4.5V)
General Description
The AOT426 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOT426 is Pb-free (meets ROHS & Sony
259 specifications). AOT426L is a Green Product
ordering option. AOT426 and AOT426L are
electrically identical.
G
D
S
G D S
TO-220
Alpha & Omega Semiconductor, Ltd.