Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
14.2 20
39 50
R
θJC
0.8 1.5
W
Junction and Storage Temperature Range
A
P
D
°C
100
50
-55 to 175
T
C
=100°C
I
D
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
C
=25°C
G
T
C
=100°C
B
30
Maximum Junction-to-Ambient
A
Steady-State
110
88
200
Avalanche Current
C
30
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
A
Repetitive avalanche energy L=0.1mH
C
112 mJ
AOT424
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 110A (VGS = 10V)
R
DS(ON)
< 4mΩ (V
GS
= 10V)
R
DS(ON)
< 5.5mΩ (V
GS
= 4.5V)
General Description
The AOT424 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOT424 is Pb-free (meets ROHS
& Sony 259 specifications). AOT424L is a Green
Product ordering option. AOT424 and AOT424L are
electrically identical.
G
D
S
G D S
TO-220
Alpha & Omega Semiconductor, Ltd.