Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
I
AR
A
E
AR
mJ
T
J
, T
STG
°C
Symbol Typ Units
n-ch 45 55 °C/W
n-ch 78 95 °C/W
R
θJL
n-ch 30 40 °C/W
p-ch 38.5 55 °C/W
p-ch 78 95 °C/W
R
θJL
p-ch 28 40 °C/W
Thermal Characteristics: n-channel+schottky and p-channel
-55 to 150-55 to 150
20
Avalanche Current
B
Repetitive avalanche energy 0.1mH
B
15
11
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
30 -30
±20
Drain-Source Voltage
±20Gate-Source Voltage
Max
20
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
W
7.7
6.1
30
2.3
1.45
-4.9
-6.2
2.3
1.45
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
-30
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Steady-State
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
G2
S2/A
G1
S1
D2/K
D2/K
D1
D1
1
2
3
4
8
7
6
5
N-ch
P-ch
PDIP-8
AOP610
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.7A (V
GS
=10V) -6.2A (V
GS
=10V)
R
DS(ON)
R
DS(ON)
< 24mΩ (V
GS
=10V) < 37mΩ (V
GS
= -10V)
< 42mΩ (V
GS
=4.5V) < 60mΩ (V
GS
= -4.5V)
ESD rating: 1500V (HBM)
General Description
The AOP610 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications. A
Schottky diode in parallel with the n-channel
FET reduces body diode related losses. It is
ESD protected. Standard product AOP610 is
Pb-free (meets ROHS & Sony 259
specifications). AOP610L is a Green Product
ordering option. AOP610 and AOP610L are
electrically identical.
n-channel p-channel
G2
D2
S2
G1
D1
S1
K2
A2
Alpha & Omega Semiconductor, Ltd.