Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Device Typ Max Units
n-ch 37 50 °C/W
n-ch 74 90 °C/W
R
θJL
n-ch 28 40 °C/W
p-ch 35 50 °C/W
p-ch 73 90 °C/W
R
θJL
p-ch 32 40 °C/W
Thermal Characteristics: n-channel and p-channel
-55 to 150-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
60 -60
±20
Drain-Source Voltage
±20Gate-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
W
4.7
3.8
20
2.5
1.6
-2.7
-3.4
2.5
1.6
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
-20
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Steady-State
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
AOP607
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 60V -60V
I
D
= 4.7A (V
GS
=10V) -3.4A (V
GS
=-10V)
R
DS(ON)
R
DS(ON)
< 56mΩ (V
GS
=10V) < 105mΩ (V
GS
=-10V)
< 77mΩ (V
GS
=4.5V) < 135mΩ (V
GS
=-4.5V)
General Description
The AOP607 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs
may be used in H-bridge, Inverters and other
applications. Standard Product AOP607 is Pb-
free (meets ROHS & Sony 259 specifications).
AOP607L is a Green Product ordering option.
AOP607 and AOP607L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
PDIP-8
G2
D2
S2
G1
D1
S1
n-channel p-channel
Alpha & Omega Semiconductor, Ltd.