Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Device Typ Max Units
n-ch 30 40 °C/W
n-ch 66 85 °C/W
R
θJL
n-ch 25 35 °C/W
p-ch 30 40 °C/W
p-ch 66 85 °C/W
R
θJL
p-ch 25 35 °C/W
Thermal Characteristics: n-channel and p-channel
-55 to 150-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
60 -60
±20
Drain-Source Voltage
±20Gate-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
W
7.9
6.3
40
3.1
2
-4.9
-6.1
3.1
2
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
-30
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Steady-State
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
AOP606
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 60V -60V
I
D
= 7.9A (V
GS
=10V) -6.1A
R
DS(ON)
R
DS(ON)
< 25mΩ (V
GS
=10V) < 42mΩ (V
GS
= -10V)
< 30mΩ (V
GS
=4.5V) < 52mΩ (V
GS
= -4.5V)
General Description
The AOP606 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs may
be used in inverter and other PWM applications.
Standard Product AOP606 is Pb-free (meets
ROHS & Sony 259 specifications). AOP606L is a
Green Product ordering option. AOP606 and
AOP606L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
PDIP-8
G2
D2
S2
G1
D1
S1
n-channel p-channel
Alpha & Omega Semiconductor, Ltd.