Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Typ Max
40 50
67 80
R
θJL
33 40
Symbol Typ Max
38 50
66 80
R
θJL
30 40
-30
±20Gate-Source Voltage
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
W
7.5
6
30
2.5
1.6
-5.3
-6.6
2.5
1.6
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
30 -30
±20
Drain-Source Voltage
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Units
°C/W
Junction and Storage Temperature Range -55 to 150-55 to 150
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics: p-channel
°C/W
°C/W
Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
AOP605
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.5A (V
GS
= 10V) -6.6A (V
GS
= -10V)
R
DS(ON)
< 28mΩ (V
GS
= 10V) < 35mΩ (V
GS
= -10V)
< 43mΩ (V
GS
= 4.5V) < 58mΩ (V
GS
= -4.5V)
General Description
The AOP605 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AOP605 is Pb-free (meets ROHS
& Sony 259 specifications). AOP605L is a Green
Product ordering option. AOP605 and AOP605L are
electrically identical.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
PDIP-8
G2
D2
S2
G1
D1
S1
n-channel p-channel
Alpha & Omega Semiconductor, Ltd.