Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
DM
T
J
, T
STG
-30
±20Gate-Source Voltage
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
W
7.5
6
30
2.5
1.6
-5.3
-6.6
2.5
1.6
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
30 -30
±20
Drain-Source Voltage
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Units
V
Junction and Storage Temperature Range -55 to 150-55 to 150
Parameter Maximum Schottky
Reverse Voltage 30
AT
A
=70°C 2.7
Pulsed Forward Current
B
20
Continuous Forward
Current
A
T
A
=25°C
I
D
4
W
T
A
=70°C 1.6
Junction and Storage Temperature Range -55 to 150 °C
Power Dissipation
A
T
A
=25°C
P
D
2.5
AOP601
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.5A (VGS = 10V) -6.6A
R
DS(ON)
< 28mΩ < 35mΩ (V
GS
= -10V)
< 43mΩ < 58mΩ (V
GS
= -4.5V)
Schottky
V
DS
=30V, I
F
=3A, V
F
<0.5V@1A
General Description
The AOP601 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses. Standard
Product AOP601 is Pb-free (meets ROHS & Sony
259 specifications). AOP601L is a Green Product
ordering option. AOP601 and AOP601L are
electrically identical.
D2
G2
S2
G1
D1
S1
K
A
G1
S1/A
G2
S2
D1/K
D1/K
D2
D21
2
3
4
8
7
6
5
N-ch
P-ch
PDIP-8
Alpha & Omega Semiconductor, Ltd.