Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
130
Maximum Junction-to-Lead
C
Steady-State 40 50
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
60 75
°C/W
Maximum Junction-to-Ambient
A
Steady-State
89
75
°C/W
Maximum Junction-to-Ambient
A
Steady-State
81 100
Maximum Junction-to-Lead
C
Steady-State 37 45
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
49
Parameter: Thermal Characteristics MOSFET Typ Max
W
1.1 0.62
Junction and Storage Temperature Range -55 to 150 -55 to 150
Power Dissipation
P
D
1.7 0.96
A1.2
Pulsed Forward Current
B
7
Schottky reverse voltage 20
Continuous Forward Current
A
I
F
1.9
A-2.7
Pulsed Drain Current
B
-15
Gate-Source Voltage ±8
Continuous Drain Current
A
I
D
-3.4
Parameter MOSFET Schottky
Drain-Source Voltage -20
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AON4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -20V
I
D
= -3.4A (V
GS
= -4.5V)
R
DS(ON)
< 90mΩ (V
GS
= -4.5V)
R
DS(ON)
< 120mΩ (V
GS
= -2.5V)
R
DS(ON)
< 160mΩ (V
GS
= -1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AON4701 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the implementation
of a bidirectional blocking switch, or for DC-DC
conversion applications. Standard Product AON4701 is
Pb-free (meets ROHS & Sony 259 specifications).
AON4701L is a Green Product ordering option. AON4701
and AON4701L are electrically identical.
DFN3X2
A
K
G
D
S
G
S
A
A
D
D
K
K1
2
3
4
8
7
6
5