Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Typ Max
70 90
100 125
R
θJL
63 80
Symbol Typ Max
49 75
81 100
R
θJL
37 45
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
Drain-Source Voltage 20
4.2
-20
Gate-Source Voltage ±8 ±8
-3.4
AT
A
=70°C 3.2 -2.7
Pulsed Drain Current
B
15 -15
Continuous Drain
Current
A
T
A
=25°C
I
D
Power Dissipation
T
A
=25°C
P
D
1.4 1.7
W
T
A
=70°C 0.9 1.1
Junction and Storage Temperature Range -55 to 150 -55 to 150
Thermal Characteristics: n-channel
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Steady-State
°C/W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics: p-channel
Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
AON4602
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 20V -20V
I
D
= 4.2A -3.4A (V
GS
= ±4.5V)
R
DS(ON)
< 50mΩ

< 90mΩ (V
GS
= ±4.5V)
R
DS(ON)
< 63mΩ < 120mΩ (V
GS
= ±2.5V)
R
DS(ON)
< 87mΩ < 160mΩ (V
GS
= ±1.8V)
General Description
The AON4602 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AON4602 is Pb-free (meets ROHS
& Sony 259 specifications). AON4602L is a Green
Product ordering option. AON4602 and AON4602L are
electrically identical.
DFN3X2
G2
S2
G1
S1
D2
D2
D1
D11
2
3
4
8
7
6
5
G2
D2
S2
G1
D1
S1
n-channel p-channel
Alpha & Omega Semiconductor, Ltd.