Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
21 25
48 60
R
θJC
1 1.5
°C
mJ
W
50
W
Repetitive avalanche energy L=0.3mH
C
145
Power Dissipation
A
I
D
Avalanche Current
C
30
T
A
=25°C
P
DSM
2.1
Power Dissipation
B
Continuous Drain
Current
G
T
A
=25°C
I
DSM
17
T
A
=70°C 13
85
70
A
200 A
100
T
C
=100°C
Continuous Drain
Current
B
Maximum UnitsParameter
T
C
=25°C
G
T
C
=100°C
B
30
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12
Pulsed Drain Current
Gate-Source Voltage
Drain-Source Voltage
T
C
=25°C
P
D
Maximum Junction-to-Case
C
Steady-State
T
A
=70°C 1.3
Junction and Storage Temperature Range -55 to 175
°C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
AOL1400
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 4.5mΩ (V
GS
= 10V)
R
DS(ON)
< 5.5mΩ (V
GS
= 4.5V)
General Description
The AOL1400 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity and
good body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core power
conversion. Standard product AOL1400 is Pb-free
(meets ROHS & Sony 259 specifications). AOL1400L
is a Green Product ordering option. AOL1400 and
AOL1400L are electrically identical.
G
D
S
Ultra SO-8
TM
Top View
Bottom tab
connected to
drain
Fits SOIC8
footprint !
S
G
D
Alpha & Omega Semiconductor, Ltd.