Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
19.6 25
50 60
R
θJC
0.9 1.5
T
A
=70°C 1.3
W
Junction and Storage Temperature Range
P
D
°C
100
50
-55 to 175
T
C
=100°C
2.1
W
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
C
=25°C
G
T
C
=100°C
B
30
A
I
D
Maximum Junction-to-Ambient
A
Steady-State
85
63
150
Avalanche Current
C
30
Power Dissipation
A
T
A
=25°C
P
DSM
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
A
Repetitive avalanche energy L=0.1mH
C
112 mJ
Continuous Drain
Current
G
T
A
=25°C
I
DSM
18
T
A
=70°C 14
AOL1420
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 3.7mΩ (V
GS
= 10V)
R
DS(ON)
< 5.5mΩ (V
GS
= 4.5V)
General Description
The AOL1420 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOL1420 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1420L is a Green
Product ordering option. AOL1420 and AOL1420L
are electrically identical.
G
D
S
Ultra SO-8
TM
Top View
Bottom tab
connected to
drain
Fits SOIC8
footprint !
S
G
D
Alpha & Omega Semiconductor, Ltd.