Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
I
AR
A
E
AR
mJ
T
J
, T
STG
°C
Thermal Characteristics: n-channel and p-channel
Symbol Device Typ Max
n-ch 19 23 °C/W
n-ch 47 60 °C/W
R
θJC
n-ch 4.5 6 °C/W
p-ch 19 23 °C/W
p-ch 47 60 °C/W
R
θJC
p-ch 4.5 6 °C/W
-40
-18
A
W
-12
-12
40
1.3
18
-55 to 175 -55 to 175
Power Dissipation
A
T
A
=25°C
P
DSM
T
A
=70°C
2.12.1
1.3
Maximum Junction-to-Case
B
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
40
T
C
=100°CPower Dissipation
B
T
C
=25°C
P
D
Steady-State
Junction and Storage Temperature Range
Continuous Drain
Current
G
T
C
=25°C
I
D
T
C
=100°C
Repetitive avalanche energy L=0.1mH
C
W
12.5
25
12.5
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
-30
±20
Drain-Source Voltage
±20Gate-Source Voltage
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
30
12
12
40
25
Avalanche Current
C
Pulsed Drain Current
C
R
θJA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
AOD607
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 12A (V
GS
=10V) -12A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 25 mΩ (V
GS
=10V) < 37 mΩ (V
GS
= -10V)
< 34 mΩ (V
GS
=4.5V) < 62 mΩ (V
GS
= -4.5V)
General Description
The AOD607 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard product AOD607 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD607L is a Green Product ordering option.
AOD607 and AOD607L are electrically
identical.
G1
S1
G2
S2
n-channel p-channel
S1 G1 S2 G2
TO-252-4L
D-PAK
Top View
Drain Connected to
Tab
D1/D2
D1/D2
Alpha & Omega Semiconductor, Ltd.