Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
21 25
48 60
R
θJC
1 1.5
°C
V
V±25
50
100
W
Gate-Source Voltage
Drain-Source Voltage -38
Pulsed Drain Current
C
-85
-62
-120
Continuous Drain
Current
G
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
A
P
DSM
2.1
Power Dissipation
B
T
C
=25°C
P
D
T
C
=100°C
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
T
A
=70°C 1.3
Junction and Storage Temperature Range -55 to 175
Power Dissipation
A
T
A
=25°C
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Continuous Drain
Current
G
T
A
=25°C
I
DSM
-12
T
A
=70°C -9
AOL1401
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -38V
I
D
= -85A
R
DS(ON)
< 8.5mΩ (V
GS
= -10V)
R
DS(ON)
< 10mΩ (V
GS
= -4.5V)
ESD Rating: 3000V HBM
General Description
The AOL1401 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected. Standard Product AOL1401 is Pb-
free (meets ROHS & Sony 259 specifications).
AOL1401L is a Green Product ordering option.
AOL1401 and AOL1401L are electrically identical.
Ultra SO-8
TM
Top View
Bottom tab
connected to
drain
Fits SOIC8
footprint !
D
S
G
S
G
D
Alpha & Omega Semiconductor, Ltd.