Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
I
AR
A
E
AR
mJ
T
J
, T
STG
°C
Thermal Characteristics: n-channel and p-channel
Symbol Device Typ Max
n-ch 17.4 30 °C/W
n-ch 50 60 °C/W
R
θJC
n-ch 4 7.5 °C/W
p-ch 16.7 25 °C/W
p-ch 40 50 °C/W
R
θJC
p-ch 2.5 4 °C/W
R
θJA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
60
12
12
23
20
Avalanche Current
C
Pulsed Drain Current
C
-60
±20
Drain-Source Voltage
±20Gate-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
Repetitive avalanche energy L=0.1mH
C
W
10
37.5
18.8
Continuous Drain
Current
G
T
C
=25°C
I
D
T
C
=100°C
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
23
T
C
=100°CPower Dissipation
B
T
C
=25°C
P
D
Steady-State
Junction and Storage Temperature Range
Maximum Junction-to-Case
B
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
-55 to 175
Power Dissipation
A
T
A
=25°C
P
DSM
T
A
=70°C
2.52
1.6
30
1.3
12
-55 to 175
-30
-12
A
W
-10
-12
AOD603
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 60V -60V
I
D
= 12A (V
GS
=10V) -12A (VGS=-10V)
R
DS(ON)
R
DS(ON)
< 60mΩ (V
GS
=10V) < 115mΩ (V
GS
=- 10V)
< 85mΩ (V
GS
=4.5V) < 150mΩ (V
GS
= -4.5V)
General Description
The AOD603 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other applications.
Standard Product AOD603 is Pb-free (meets ROHS
& Sony 259 specifications). AOD603L is a Green
Product ordering option. AOD603 and AOD603L are
electrically identical.
G2
D2
S2
G1
D1
S1
n-channel p-channel
S1 G1 D1/D2 G2 S2
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.