Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
15 18
45 55
R
θJC
1 1.5Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
°C/W
Maximum Junction-to-Ambient
A
W
T
A
=70°C 1.5
Junction and Storage Temperature Range -55 to 175 °C
Power Dissipation
A
T
A
=25°C
P
DSM
2.3
Avalanche Current
C
20 A
Repetitive avalanche energy L=0.1mH
C
200 mJ
AT
C
=100°C 28
Pulsed Drain Current
C
80
Continuous Drain
Current
T
C
=25°C
I
D
40
Drain-Source Voltage 105 V
Gate-Source Voltage ±25 V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
Steady-State
R
θJA
°C/W
Power Dissipation
B
T
C
=25°C
P
D
100
W
T
C
=100°C 50
AOD464
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 105V
I
D
= 40 A (V
GS
=10V)
R
DS(ON)
< 28 mΩ (V
GS
=10V) @ 20A
R
DS(ON)
< 31 mΩ (V
GS
= 6V)
General Description
The AOD464 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard Product AOD464 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD464L is a Green Product ordering option. AOD464
and AOD464L are electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.