Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
17.4 30
50 60
R
θJC
4 7.5
W
T
A
=70°C 1.3Power Dissipation
A
T
A
=25°C
P
DSM
2
Repetitive avalanche energy L=0.1mH
C
20
A
mJ
Junction and Storage Temperature Range
A
P
D
°C
20
10
-55 to 175
T
C
=100°C
Avalanche Current
C
12
I
D
12
12
30Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage 40
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AOD454Y
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 40V
I
D
= 12 A (V
GS
= 10V)
R
DS(ON)
< 33 mΩ (V
GS
= 10V)
R
DS(ON)
< 47 mΩ (V
GS
= 4.5V)
General Description
The AOD454Y uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge.
This device is suitable for use in PWM, load switching
and general purpose applications. Standard product
AOD454Y is Pb free, inside and out. It uses Pb-free die
attach and plating material(meets ROHS & Sony 259
specifications). AOD454YL is a Green Product ordering
option. AOD454Y and AOD454YL are electrically
identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.