193
18
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
15 20
44 55
R
θJC
1.8 3
T
A
=70°C 1.9Power Dissipation
A
T
A
=25°C
P
DSM
2.7
330
A
mJ
W
Junction and Storage Temperature Range
A
P
D
°C
50
25
-55 to 175
T
C
=100°C
Avalanche Current
C
45
I
D
85
60
200Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
T
C
=25°C
G
T
C
=100°C
Repetitive avalanche energy L=0.3mH
C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage 30
Maximum UnitsParameter
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
AOD458
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (VGS = 10V)
R
DS(ON)
< 4mΩ (V
GS
= 10V)
R
DS(ON)
< 5mΩ (VGS = 4.5V)
General Description
The AOD458 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOD458 is Pb-free (meets ROHS & Sony
259 specifications). AOD458L is a Green Product
ordering option. AOD458 and AOD458L are
electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.