193
18
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
17.1 30
50 60
R
θJC
46
W
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±30Gate-Source Voltage
Drain-Source Voltage 200
Maximum UnitsParameter
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
T
C
=25°C
T
C
=100°C
Repetitive avalanche energy L=1.35mH
C
I
D
3.8
2.7
10
Junction and Storage Temperature Range
A
P
D
°C
25
12.5
-55 to 175
T
C
=100°C
Avalanche Current
C
3
6
A
mJ
W
T
A
=70°C 1.3Power Dissipation
A
T
A
=25°C
P
DSM
2.1
AOD450
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 200V
I
D
= 3.8A
R
DS(ON)
<0.7Ω (V
GS
= 10V)
General Description
The AOD450 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in inverter, load
switching and general purpose applications. Standard
product AOD450 is Pb-free (meets ROHS & Sony
259 specifications). AOD450L is a Green Product
ordering option. AOD450 and AOD450L are
electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.