Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
16.7 25
40 50
R
θJL
2.5 3Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
T
A
=70°C 1.6
Junction and Storage Temperature Range -55 to 175
Power Dissipation
A
T
A
=25°C
P
DSM
2.5
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25°C
P
D
W
T
C
=100°C
Avalanche Current
C
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
A
=25°C
G
T
A
=100°C
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
Gate-Source Voltage
Drain-Source Voltage -40
Pulsed Drain Current
-12
-12
-30
°C
V
V±20
25
A
-12
30
50
AOD413
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -40V
I
D
= -12A (V
GS
= -10V)
R
DS(ON)
< 45mΩ (V
GS
= -10V)
R
DS(ON)
< 69mΩ (V
GS
= -4.5V)
General Description
The AOD413 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOD413 is Pb-free (meets ROHS & Sony 259
specifications). AOD413L is a Green Product
ordering option. AOD413 and AOD413L are
electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.