Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
16.7 25
40 50
R
θJL
2.5 3
°C
V
V±20
25
A
-12
30
50
Gate-Source Voltage
Drain-Source Voltage -40
Pulsed Drain Current
-12
-12
-30
Avalanche Current
C
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
A
=25°C
G
T
A
=100°C
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
P
DSM
2.5
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25°C
P
D
W
T
C
=100°C
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
T
A
=70°C 1.6
Junction and Storage Temperature Range -55 to 175
Power Dissipation
A
T
A
=25°C
Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
AOD413Y
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -40V
I
D
= -12A (V
GS
= -10V)
R
DS(ON)
< 45mΩ (V
GS
= -10V)
R
DS(ON)
< 69mΩ (V
GS
= -4.5V)
General Description
The AOD413Y uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard product
AOD413Y is Pb free, inside and out. It uses Pb-free
die attach and plating material(meets ROHS & Sony
259 specifications). AOD413YL is a Green Product
ordering option. AOD413Y and AOD413YL are
electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.