Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
13 20
39 50
R
θJL
0.56 1.5
A
Repetitive avalanche energy L=0.1mH
C
120 mJ
Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±25
Pulsed Drain Current
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
-85
-65
-200
Avalanche Current
C
-30
Power Dissipation
A
T
A
=25°C
P
DSM
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
A
=25°C
G
T
A
=100°C
B
-30
W
Junction and Storage Temperature Range
A
P
D
°C
100
50
-55 to 175
T
C
=100°C
I
D
2.5
W
T
A
=70°C 1.6
AOD403
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -85A (V
GS
= -20V)
R
DS(ON)
< 6mΩ (V
GS
= -20V)
R
DS(ON)
< 7.6mΩ (V
GS
= -10V)
General Description
The AOD403 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOD403 is Pb-free (meets ROHS & Sony 259
specifications). AOD403L is a Green Product
ordering option. AOD403 and AOD403L are
electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected
to Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.