Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
11 17
42 50
R
θJC
2.4 3
W
T
A
=70°C 2.1Power Dissipation
A
T
A
=25°C
P
DSM
3
Repetitive avalanche energy L=0.1mH
C
135
A
mJ
Junction and Storage Temperature Range
A
P
D
°C
50
25
-55 to 175
T
C
=100°C
Avalanche Current
C
30
I
D
55
55
100Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage 25
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AOB434
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) =25V
I
D
= 55 A (VGS = 10V)
R
DS(ON)
< 9.5 mΩ (V
GS
= 10V)
R
DS(ON)
< 15 mΩ (V
GS
= 4.5V)
General Description
The AOB434 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product AOB434 is Pb-free (meets ROHS &
Sony 259 specifications). AOB434L is a Green
Product ordering option. AOB434 and AOB434L are
electrically identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.