Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
11.2 13.5
50 60
R
θJC
2.5 3Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
Steady-State
°C/WMaximum Junction-to-Ambient
A
W
T
C
=100°C 25
Junction and Storage Temperature Range -55 to 175 °C
Power Dissipation
B
T
C
=25°C
P
D
50
Avalanche Current
C
12 A
Repetitive avalanche energy L=0.1mH
C
23 mJ
AT
C
=100°C 12
Pulsed Drain Current
C
30
Continuous Drain
Current
G
T
C
=25°C
I
D
12
Drain-Source Voltage 60 V
Gate-Source Voltage ±20 V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
t ≤ 10s
R
θJA
°C/W
Power Dissipation
A
T
A
=25°C
P
DSM
2
W
T
A
=70°C 1.3
AOB430Y
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 12A (Vgs=10V)
R
DS(ON)
< 63 mΩ (V
GS
=10V)
R
DS(ON)
< 85 mΩ (V
GS
= 6V)
General Description
The AOB430Y uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard product AOB430Y is
Pb free, inside and out. It uses Pb-free dia attach
and plating material(meets ROHS & Sony 259
specifications). AOB430YL is a Green Product
ordering option. AOB430Y and AOB430YL are
electrically identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.