Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
8.1 12
33 40
R
θJL
0.84 1.5
Junction and Storage Temperature Range -55 to 175
mJ
W
50
W
°C
Repetitive avalanche energy L=0.1mH
C
140
Power Dissipation
A
AI
D
Avalanche Current
C
30 A
200
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
C
=25°C
G
T
C
=100°C
B
30
110
78
T
A
=25°C
P
DSM
3.1
Power Dissipation
B
T
C
=25°C
P
D
100
T
C
=100°C
T
A
=70°C 2
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
AOB416
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 110A (V
GS
= 10V)
R
DS(ON)
< 4.5mΩ (V
GS
= 10V) @ 30A
R
DS(ON)
< 6.5mΩ (V
GS
= 4.5V) @ 30A
General Description
The AOB416 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. Standard Product AOB416 is Pb-
free (meets ROHS & Sony 259 specifications).
AOB416L is a Green Product ordering option.
AOB416 and AOB416L are electrically identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.