Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
82 110
115 150
R
θJL
55 80
Junction and Storage Temperature Range
A
P
D
°C
1.1
0.73
-55 to 150
T
A
=70°C
I
D
2.8
2.3
10Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage 30
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AOA400
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 2.8 A (V
GS
= 10V)
R
DS(ON)
< 85mΩ (V
GS
= 10V)
R
DS(ON)
< 100mΩ (V
GS
= 4.5V)
R
DS(ON)
< 140mΩ (V
GS
= 2.5V)
General Description
The AOA400 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOA400A400 is Pb-
free (meets ROHS & Sony 259 specifications).
AOA400L is a Green Product ordering option.
AOA400 and AOA400L are electrically identical.
G
D
S
S
G
D
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.