Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
64 83
89 120
R
θJL
53 70
Junction and Storage Temperature Range
A
P
D
°C
1.5
0.96
-55 to 150
T
A
=70°C
I
D
7
5.5
30Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage 30
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AO8818
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
V
DS
(V) = 30V
I
D
= 7A (V
GS
= 10V)
R
DS(ON)
< 18mΩ (V
GS
= 10V)
R
DS(ON)
< 20mΩ (V
GS
= 4.5V)
R
DS(ON)
< 27mΩ (V
GS
= 2.5V)
ESD Rating: 1500V HBM
G1
S1
S1
D1/D2
G2
S2
S2
D1/D21
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
General Description
The AO8818 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AO8818 is Pb-free
(meets ROHS & Sony 259 specifications). AO8818L is
a Green Product ordering option. AO8818 and
AO8818L are electrically identical.
Alpha & Omega Semiconductor, Ltd.