Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
48 62.5
74 110
R
θJL
35 40
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±8Gate-Source Voltage
Drain-Source Voltage 20
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
6.4
30Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
2
1.28
-55 to 150
T
A
=70°C
I
D
8
AO9926E
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 8A (V
GS
= 4.5V)
R
DS(ON)
< 21mΩ (V
GS
= 4.5V)
R
DS(ON)
< 25mΩ (V
GS
= 2.5V)
R
DS(ON)
< 33mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AO9926E uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product
AO9926E is Pb-free (meets ROHS & Sony 259
specifications). AO9926EL is a Green Product
ordering option. AO9926E and AO9926EL are
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.