Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
73 90
96 125
R
θJL
63 75
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±12Gate-Source Voltage
Drain-Source Voltage 20
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
6.3
30Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
1.4
0.9
-55 to 150
T
A
=70°C
I
D
7.9
AO8808A
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 7.9A (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 15mΩ (V
GS
= 4.5V)
R
DS(ON)
< 20mΩ (V
GS
= 2.5V)
R
DS(ON)
< 28mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AO8808A uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
Standard Product AO8808A is Pb-free (meets ROHS
& Sony 259 specifications). AO8808AL is a Green
Product ordering option. AO8808A and AO8808AL
are electrically identical.
D2
G1
S1
S1
D1
G2
S2
S2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.