Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
73 90
96 125
R
θJL
63 75
Junction and Storage Temperature Range
A
P
D
°C
1.4
1
-55 to 150
T
A
=70°C
I
D
8
6.3
30Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage 20
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AO8808
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 8A (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 15mΩ (V
GS
= 4.5V)
R
DS(ON)
< 20mΩ (V
GS
= 2.5V)
R
DS(ON)
< 28mΩ (V
GS
= 1.8V)
General Description
The AO8808 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V V
GS(MAX)
rating.
This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AO8808 is Pb-free (meets
ROHS & Sony 259 specifications). AO8808L is a Green
Product ordering option. AO8808 and AO8808L are electrically
identical.
D2
G1
D1
S1
G2
D2
S2
G1
S1
S1
D1
G2
S2
S2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
Alpha & Omega Semiconductor, Ltd.