Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
73 90
96 125
R
θJL
63 75
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±8Gate-Source Voltage
Drain-Source Voltage -20
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
-3.7
-30Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
1.4
0.9
-55 to 150
T
A
=70°C
I
D
-4.7
AO8801
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -20V
I
D
= -4.7 A (V
GS
= -4.5V)
R
DS(ON)
< 42mΩ (V
GS
= -4.5V)
R
DS(ON)
< 53mΩ (V
GS
= -2.5V)
R
DS(ON)
< 70mΩ (V
GS
= -1.8V)
ESD Rating: 3000V HBM
General Description
The AO8801 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 1.8V. This device is
suitable for use as a load switch or in PWM applications.
It is ESD protected. Standard Product AO8801 is Pb-
free (meets ROHS & Sony 259 specifications).
AO8801L is a Green Product ordering option. AO8801
and AO8801L are electrically identical.
D
S1
G1
D2
S2
G2
G1
S1
S1
D1
G2
S2
S2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
D2
Alpha & Omega Semiconductor, Ltd.