TECHNICAL DATA

PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/501
Devices Qualified Level
2N6051 2N6052




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N6051 2N6052 Unit
Collector - Emitter Voltage V CEO 80 100 Vdc
Col lector - Base Voltage V CBO 80 100 Vdc
Emitter - Base Voltage V EBO 5.0 Vdc
Base Current I B 0.2 Adc
Collector Current I C 12 Adc
Total Power Dissipation (1) @ T C = +25 0 C
@ T C = +100 0 C P T
150
75
W
W
Operating & Storage Junction Temperature Range T op , T stg - 55 to +175 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.0 0 C/W
1) Derate linearly at 1.0 W/ 0 C above T C > +25 0 C

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 100 mAdc 2N6051
2N6052

V (BR) CEO

80
100

Vdc
Collector - Emitter Cutoff Current
V CE = 40 Vdc 2N6051
V CE = 50 Vdc 2N6052

I CEO

1.0
1.0

mAdc
Collector - Emitter Cutoff Current
V CE = 80 Vdc, V BE = 1.5 Vdc 2N6051
V CE = 100 Vdc, V BE = 1.5 Vdc 2N6052

I CEX

0.5
0.5

mAdc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc

I EBO

2.0

mAdc




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TO - 3*
(TO - 204AA)