Power Transistors
1
Publication date: February 2003 SJD00269BED
2SD2479
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• High forward current transfer ratio h
FE
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 100 µA, I
E
= 0 120 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0 100 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 100 µA, I
C
= 0 5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 25 V, I
E
= 0 0.1 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 4 V, I
C
= 01µA
Forward current transfer ratio
*
1, 2
h
FE
V
CE
= 10 V, I
C
= 1 A 4 000 40 000 
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= 1 A, I
B
= 1 mA 1.5 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= 1 A, I
B
= 1 mA 2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 150 MHz
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
120 V
Collector-emitter voltage (Base open) V
CEO
100 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
2A
Peak collector current I
CP
3A
Collector power dissipation P
C
1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2 2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
10.8 C 23
0.4±0.1
4.5±0.2
0.8 C 0.8 C
3.8
±
0.2
16.0
±
1.0
10.8
±
0.2
2.05
±
0.2
90˚
2.5
±
0.1
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
B
≈ 200 Ω
C
E