LESHAN RADIO COMPANY, LTD.
BC817-16WT1–1/2
1
3
2
General Purpose Transistors
Preferred Device
BC817-40YLT1 is LRC
BC817-16WT1
CASE 419-02, STYLE 2
SOT-323 (SC-70)
2
EMITTER
3
COLLECTOR
1
BASE
NPN Silicon
MAXIMUM RATINGS
Symbol Value Unit
Collector-Emitter Voltage V
CEO
45 V
Collector-Base Voltage V
CBO
50 V
Emitter-Base Voltage V
EBO
5V
Collector current-continuoun IC 500 mAdc
THERMAL CHARATEERISTICS
Symbol Max Unit
Total Device Dissipation FR-5 Board, (1) P
D
225 mW
1.8 mW/
o
C
Thermal Resistance, Junction to Ambient R
θJA
556
o
C/W
P
D
300 mW
2.4 mW/
o
C
Thermal Resistance, Junction to Ambient R
θJA
417
o
C/W
Junction and Storage Temperature Tj ,Tstg -55 to +150
o
C
DEVICE MARKING
BC817-16WT1=6A
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1) V(BR)CEO 45 - - V
(IC=10mA)
Collector-Emitter Breakdown Voltage V(BR)CES 50
(IC=10µ A)
Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V
(IE=10µ A)
Collector Cutoff Current (VCB=30V) ICBO - - 100 nA
Emitter Cutoff Current (VBE=7V) IEBO 100 nA
Characteristic
Total Device Dissipation
Derate above 25
o
C
Rating
T
A
=25
o
C
Derate above 25
o
C
Alumina Substrate, (2) TA=25
o
C
Characteristic