1
Features
• 16-Mbit (x16) Flash and 8-Mbit PSRAM
2.7V to 3.3V Operating Voltage
Low Operating Power
– 27 mA Operating Current
– 53 µA Standby Current
Extended Temperature Range
Flash
2.7V to 3.3V Read/Write
Access Time – 70 ns
Sector Erase Architecture
– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
Fast Word Program Time – 12 µs
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase of a
Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
–12 mA Active
– 13 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection and Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
Top/Bottom Boot Block Configuration
128-bit Protection Register
Minimum 100,000 Erase Cycles
PSRAM
8-Mbit (512K x 16)
2.7V to 3.3V V
CC
Operating Voltage
70 ns Access Time
Fully Static Operation and Tri-state Output
ISB0 < 10 µA when Deep Power-Down
Device Number Flash Configuration PSRAM Configuration
AT52BC1661A(T) 16M (1M x 16) 8M (512K x 16)
16-Mbit Flash +
8-Mbit PSRAM
Stack Memory
AT52BC1661A
AT52BC1661AT
Preliminary
Rev. 3455A–STKD–11/04