BIPOLARICS, INC. Part Number BRF480

FEATURES:
• High Gain Bandwidth Product
f
t
= 8 GHz typ @ I
C
= 70 mA
• High Gain
|S
21
|
2
= 14.2 dB @ 1.0 GHz
8.2 dB @ 2.0 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T
A
= 25
o
C)
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
Absolute Maximum Ratings:
V
CBO
Collector-Base Voltage 25 V
V
CEO
Collector-Emitter Voltage 15 V
V
EBO
Emitter-Base Voltage 1.5 V
I
C
Collector Current (continuous) 120 mA
I
C
Collector Current (instantaneous) 180 mA
T
J
Junction Temperature 200
o
C
T
STG
Storage Temperature -65 to 150
o
C
θJC Thermal Resistance 50 C/W
SYMBOL PARAMETERS RATING UNITS
MAX
(1)
SYMBOL PARAMETERS & CONDITIONS UNIT MIN. TYP. MAX.
V
CE
= 8V, I
C
=60 mA, Class A, unless stated
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF480 is a high performance silicon bipolar
transistor intended for medium power linear and Class C
applications at VHF, UHF and microwave frequencies in 7.2
and 12V systems. Depending on package type, the BRF480
can operate at up to 0.5W. These applications include high
intermod receivers, CATV and instrumentation amplifiers as
well as pre-drivers, drivers and final stages in transmitter
applications such as cellular telephone. Package options in-
clude Dice, SOT-223 Surface Mount, Ceramic Micro-X,
0.145" Plastic SOT-103 and 0.230" power flange package.
(1) Depends on package
C
CB
Collector Base Capacitance: V
CB
=8V f = 1MHz pF .75
I
C
= 75 mA
f
t
Gain Bandwidth Product GHz 8.0
|S
21
|
2
Insertion Power Gain: Micro-X f = 1.0 GHz dB 14.2
SOT-103 f = 2.0 GHz dB 8.2
P
1dB
Power output at 1dB compression: f = 1.0 GHz dBm 27.0
NF Noise Figure: V
CE
= 5V, I
C
=20 mA f = 1.0 GHz dB 1.6
h
FE
Forward Current Transfer Ratio: V
CE
= 5V, I
C
= 15 mA 30 100 300
I
CBO
Collector Cutoff Current : V
CB
= 8V µA 0.4