BFP740
Nov-19-2004
1
NPN Silicon Germanium RF Transistor*
• High gain ultra low noise RF transistor
• Provides outstanding performance for a wide range
of wireless applications up to 10 GHz
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.85 dB at 6 GHz
• High maximum stable gain
G
ms
= 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz f
T
-Silicon Germanium technology
*Short-term description
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP740 R7s
1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
T
A
> 0°C
T
A
≤ 0°C
V
CEO

4
3.5
V
Collector-emitter voltage V
CES
13
Collector-base voltage V
CBO
13
Emitter-base voltage V
EBO
1.2
Collector current I
C
30 mA
Base current I
B
3
Total power dissipation
1)

T
S
≤ 89°C
P
tot
160 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
1
T
S
is measured on the collector lead at the soldering point to the pcb