Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
24 40
54 75
R
θJL
21 30
W
Junction and Storage Temperature Range
A
P
D
°C
3.1
2
-55 to 150
T
A
=70°C
I
D
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
60
Maximum Junction-to-Ambient
A
Steady-State
8.2
6.6
40
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
B
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
AO4438
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 8.2A (V
GS
= 10V)
R
DS(ON)
< 22mΩ (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 4.5V)
General Description
The AO4438 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4438 is Pb-free
(meets ROHS & Sony 259 specifications). AO4438L
is a Green Product ordering option. AO4438 and
AO4438L are electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.