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BAS21SLT1G

器件描述:Dual Series High Voltage Switching Diode
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:53.91KB,共4页
Sponsor by e络盟
器件资料摘要:
 Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. 4
1 Publication Order Number:
BAS21SLT1/D
BAS21SLT1
Preferred Device
Dual Series High Voltage
Switching Diode
Features
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
250 Vdc
Repetitive Peak Reverse Voltage V
RRM
250 Vdc
Peak Forward Current I
F
225 mAdc
Peak Forward Surge Current I
FM(surge)
625 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
JA
417 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Device Package Shipping

ORDERING INFORMATION
SOT−23
CASE 318
STYLE 11
BAS21SLT1 SOT−23 3000/Tape & Reel
MARKING DIAGRAM
JT M
JT = Device Code
M = Date Code
1
2
3
Preferred devices are recommended choices for future use
and best overall value.
3
CATHODE/ANODE
ANODE
1
CATHODE
2
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAS21SLT1G SOT−23
(Pb−Free)
3000/Tape & Reel