VISHAY
BAR65V-02V
Document Number 85644
Rev. 1, 23-Oct-02
Vishay Semiconductors
www.vishay.com
1
16863
C
A
RF PIN Diode
Mechanical Data
Case: Plastic case (SOD 523)
Weight: 1.5 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box
Description
With the very low forward resistance combined with a
low reverse capacitance the BAR65V-02V is ideal for
RF-signal switching. Depending on the forward cur-
rent (If) the forward resistance (rf) can be reduced to
only a few hundred mΩ. Driven In the reverse mode
the "switch is off" , the isolation capacitance is less
than 1pF. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
Features
• Space saving SOD523 package with low series
inductance
Very low forward resistance
Small reverse capacitance
Applications
For frequency up to 3 GHz
RF-signal switching
Mobile, wireless and TV-Applications
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Part Ordering code Marking Remarks Package
BAR65V-02V BAR65V-02V-GS08 E Tape and Reel SOD523
Parameter Test condition Sub type Symbol Value Unit
Reverse voltage V
R
30 V
Forward current I
F
100 mA
Junction temperature T
j
150 °C
Storage temperature range T
stg
- 55 to +
150
°C
Parameter Test condition Symbol Value Unit
Junction soldering point R
thJS
100 K/W
Parameter Test condition Sub type Symbol Min Typ. Max Unit
Reverse voltage I
R
= 10 µA V
R
30 V
Reverse current V
R
= 20 V I
R
20 nA
Forward voltage I
F
= 100 mA V
F
1.1 V