Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BV
DSS
80V
▼ Single Drive Requirement R
DS(ON)
45mΩ
▼ Fast Switching Performance I
D
21.3A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.0 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 41.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.33
Continuous Drain Current, V
GS
@ 10V 13.4
Pulsed Drain Current
1
80
Gate-Source Voltage ±25
Continuous Drain Current, V
GS
@ 10V 21.3
Parameter Rating
Drain-Source Voltage 80
200406041
AP9980H/J
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9980J) are available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
TO-252(H)