Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
100V
▼ Lower On-resistance R
DS(ON)
15mΩ
▼ Fast Switching Characteristic I
D
72A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 0.9 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 138
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 1.11
Continuous Drain Current, V
GS
@ 10V 45
Pulsed Drain Current
1
260
Gate-Source Voltage ±20
Continuous Drain Current, V
GS
@ 10V 72
Parameter Rating

Drain-Source Voltage 100
AP75T10S/P
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP75T10P) are available for low-profile applications.
G
D
S
TO-263(S)
G
D
S
TO-220(P)