Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
25V
▼ Low Gate Charge R
DS(ON)
25mΩ
▼ Fast Switching I
D
28A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=100℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data and specifications subject to change without notice 200127031
AP40T03S/P
Parameter Rating

Drain-Source Voltage 25
Gate-Source Voltage ± 25
Continuous Drain Current, V
GS
@ 10V 28
Continuous Drain Current, V
GS
@ 10V 24
Pulsed Drain Current
1
95
Total Power Dissipation 31.25
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.25
Thermal Data
Parameter
Storage Temperature Range
G
D
S
G
D
S TO-263
G
D
S
TO-220
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03P) are available for low-profile applications.