Advanced Power N-CHANNEL INSULATED GATE
Electronics Corp. BIPOLAR TRANSISTOR
▼ High Input Impedance V
CE
▼ High Pick Current Capability I
CP
▼ 4.5V Gate Drive
▼ Strobe Flash Applications
Absolute Maximum Ratings
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol Min. Typ. Max. Units
I
GES
- - 10 uA
I
CES
- - 10 uA
V
CE(sat)
-68V
V
GE(th)
0.35 - 1.2 V
Q
g
- 64.5 - nC
Q
ge
-7-nC
Q
gc
-30-nC
t
d(on)
- 11.5 - ns
t
r
- 24.5 - ns
t
d(off)
- 150 - ns
t
f
- 3.3 - µs
C
ies
- 2227 - pF
C
oes
- 200 - pF
C
res
-79-pF
Rth
JA
1
--50℃/W
Notes:
1.Surface mounted on 1 in
2
copper pad of

FR4 board ; 125℃/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
V
2.5
200507032
℃
V
CC
=225V
℃
V
Gate-Emitter Voltage
Gate-Emitter Charge
Operating Junction Temperature Range
-55 to 150
-55 to 150
W
Parameter
Storage Temperature Range
Pulsed Collector Current
Parameter
Maximum Power Dissipation
V
GE
I
CP
V
GEP
Pulsed Gate-Emitter Voltage
P
D
@T
C
=25℃
1
450
± 6
150
± 8
AP25G45EM
Symbol
V
CE
450V
150A
Rating
Collector-Emitter Voltage
Units
V
A
Reverse Transfer Capacitance
V
CE
=450V, V
GE
=0V
V
GE
=4.5V, I
CP
=150A (Pulsed)
V
CE
=V
GE
, I
C
=250uA
I
C
=50A
V
CE
=360V
V
GE
=5V
V
CE
=25V
Test Conditions
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current (Tj=25℃)
V
GE
=± 6V, V
CE
=0V
T
STG
Turn-off Delay Time
V
GE
=0V
I
C
=50A
R
G
=25Ω
Rise Time
T
J
Gate-Collector Charge
Turn-on Delay Time
Thermal Resistance Junction-Ambient
V
GE
=5V
Fall Time
Input Capacitance
Output Capacitance
f=1.0MHz
G
C
E
E
E
E
G
C
C
C
C
SO-8