Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
25V
▼ Small package outline R
DS(ON)
117mΩ
▼ Surface mount package I
D
2.7A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Data and specifications subject to change without notice 200420043
AP2304N
Parameter Rating
Drain-Source Voltage 25
Gate-Source Voltage ±20
Continuous Drain Current
3
, V
GS
@ 4.5V 2.7
Continuous Drain Current
3
, V
GS
@ 4.5V 2.2
Pulsed Drain Current
1,2
10
Total Power Dissipation 1.38
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.01
Thermal Data
Parameter
Storage Temperature Range
G
D
S
D
G
S
SOT-23
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.