Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Dynamic dv/dt Rating BV
DSS
30V
▼ Repetitive Avalanche Rated R
DS(ON)
52mΩ
▼ Fast Switching I
D
20A
▼ Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-case Thermal Resistance Junction-case Max. 4.0 ℃/W
Rthj-amb Thermal Resistance Junction-ambient Max. 62 ℃/W

Data & specifications subject to change without notice 201024032
Thermal Data
Parameter
Pulsed Drain Current
1
60
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.25
Storage Temperature Range
Total Power Dissipation 31
-55 to 150
Continuous Drain Current, V
GS
@ 10V 20
Continuous Drain Current, V
GS
@ 10V 13
Drain-Source Voltage 30
Gate-Source Voltage
AP20N03S/P
Parameter Rating
± 20
G
D
S
G
D
S
TO-263(S)
G
D
S
TO-220(P)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20N03P) is available for low-profile applications.