Advanced Power N-CHANNEL INSULATED GATE
Electronics Corp. BIPOLAR TRANSISTOR
Description V
CES
I
CP
* High Input Impedance
* High Pick Current Capability
* 4.5V Gate Drive
* Strobe Flash Applications
Absolute Maximum Ratings
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol Min. Typ. Max. Units
I
GES
- - 10 uA
I
CES
- - 10 uA
V
CE(sat)
-58V
V
GE(th)
- - 1.2 V
Q
g
-51-nC
Q
ge
-2-nC
Q
gc
- 5.4 - nC
t
d(on)
- 5.5 - ns
t
r
-72-ns
t
d(off)
- 640 - ns
t
f
- 2.6 - us
C
ies
- 2095 - pF
C
oes
- 145 - pF
C
res
-35-pF
Rthj-c --6℃/W
Data and specifications subject to change without notice
V
20
200124032
℃
V
CC
=200V
℃
V
Gate-Emitter Voltage
Gate-Emitter Charge
Operating Junction Temperature Range
-55 to 150
-55 to 150
W
Parameter
Storage Temperature Range
Pulsed Collector Current
Parameter
Maximum Power Dissipation
V
GE
I
CP
I
GEP
Pulsed Gate-Emitter Voltage
P
D
@T
C
=25℃
450
± 6
130
± 8
AP20G45EH/J
Symbol
V
CES
450V
130A
Rating
Collector-Emitter Voltage
Units
V
A
Reverse Transfer Capacitance
V
CE
=450V, V
GE
=0V
V
GE
=4.5V, I
CP
=130A (Pulsed)
V
CE
=V
GE
, I
C
=250uA
I
C
=40A
V
CE
=300V
V
GE
=5V
V
CE
=25V
Test Conditions
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current (Tj=25℃)
V
GE
=6V, V
CE
=0V
T
STG
Turn-off Delay Time
V
GE
=0V
I
C
=40A
R
G
=25Ω
Rise Time
T
J
Gate-Collector Charge
Turn-on Delay Time
V
GE
=5V
Thermal Resistance Junction-Case
Fall Time
Input Capacitance
Output Capacitance
f=1.0MHz
G
C
E TO-252(H)
G
C
E
TO-251(J)
G
C
E