Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BV
DSS
30V
▼ Simple Drive Requirement R
DS(ON)
80mΩ
▼ Fast Switching I
D
15A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-case Thermal Resistance Junction-case Max. 4.5 ℃/W
Rthj-amb Thermal Resistance Junction-ambient Max. 62 ℃/W

Data & specifications subject to change without notice
AP15N03P
Parameter Rating
Drain-Source Voltage 30
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V 15
Continuous Drain Current, V
GS
@ 10V 9
Pulsed Drain Current
1
50
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.22
Storage Temperature Range
Total Power Dissipation 28
-55 to 150
200218032
Thermal Data
Parameter
± 20
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial applications and suited for low voltage applications such as
DC/DC converters and high efficiency switching circuit.
G
D
S
TO-220
G
D
S