Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Minimize On-resistance BV
DSS
900V
▼ Fast Switching R
DS(ON)
1.4Ω
▼ Simple Drive Requirement I
D
7.6A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 0.60 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 40 ℃/W
Data & specifications subject to change without notice
6
4.8
120
Linear Derating Factor 1.6
Parameter Rating
900
200731031
AP09N90CW
7.6
25
208
Storage Temperature Range -55 to 150
-55 to 150
Parameter
± 30
G
D
S
G
D
S
TO-3P
AP09N90C provides minimize on-state resistance , superior switching
performance and high efficiency switching power supply applications.
TO-3P package is preferred for commercial-industrial applications and
provides greater distance between pins to meet the requirements of most
safety specifications.