Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Dynamic dv/dt Rating BV
DSS
600/675V
▼ Repetitive Avalanche Rated R
DS(ON)
0.75Ω
▼ Fast Switching I
D
9A
▼ Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 0.8 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data & specifications subject to change without notice
AP09N70P/R
Rating
600/675
9
40
156
9
5
305
1.25
-55 to 150
Parameter
200218032
Parameter
Linear Derating Factor
- /A
9
Storage Temperature Range -55 to 150
AP09N70 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262
type provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching,ruggedized
design and cost-effectiveness.
The TO-220 and TO-262 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power supplies
,DC-AC converters and high current high speed switching circuits.
G
D
S
± 30
G
D
S
TO-262(R)
G
D
S
TO-220(P)
G
D
S